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a2t21h360--23nr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 63 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 2110 to 2200 mhz. 2100 mhz ? typical doherty single--carrier w--cdma characterization performance: v dd =28vdc,i dqa = 500 ma, v gsb =0.7vdc,p out =63wavg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2110 mhz 16.6 49.2 7.9 ?30.5 2140 mhz 16.8 49.7 7.9 ?31.0 2170 mhz 16.7 49.0 7.9 ?32.8 2200 mhz 16.3 47.2 7.9 ?36.1 features ? advanced high performance in--package doherty ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems document number: a2t21h360--23n rev. 0, 3/2016 freescale semiconductor technical data 2110?2200 mhz, 63 w avg., 28 v airfast rf power ldmos transistor a2t21h360--23nr6 (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) 6 3 15 24 carrier peaking vbw b (1) figure 1. pin connections note: exposed backside of the package is the source terminal for the transistors. om--1230--4l2s plastic 1. device cannot operate with v dd current supplied through pin 3 and pin 6. ? freescale semiconductor, inc., 2016. all rights reserved.
2 rf device data freescale semiconductor, inc. a2t21h360--23nr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 72 ? c, 63 w avg., w--cdma, 28 vdc, i dqa = 500 ma, v gsb =0.7vdc, 2140 mhz r ? jc 0.19 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier gate threshold voltage (v ds =10vdc,i d = 140 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i d = 500 madc, measured in functional test) v gsa(q) 1.4 1.9 2.2 vdc drain--source on--voltage (v gs =10vdc,i d =1.4adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b, peaking gate threshold voltage (v ds =10vdc,i d = 240 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =2.4adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. each side of device measured separately. (continued)
a2t21h360--23nr6 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty production test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =0.5vdc, p out = 63 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.2 16.8 19.2 db drain efficiency ? d 45.4 48.0 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.1 7.6 ? db adjacent channel power ratio acpr ? ?29.6 ?26.0 dbc load mismatch (2) (in freescale doherty production test fixture, 50 ohm system) i dqa = 500 ma, v gsb = 0.5 vdc, f = 2140 mhz vswr 10:1 at 32 vdc, 316 w cw output power (3 db input overdrive from 229 w cw rated power) no device degradation typical performance (2) (in freescale doherty characterization test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =0.7vdc, 2110?2200 mhz bandwidth p out @ 1 db compression point, cw p1db ? 229 ? w p out @ 3 db compression point (3) p3db ? 373 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2200 mhz bandwidth) ? ? ?29 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 140 ? mhz gain flatness in 90 mhz bandwidth @ p out =63wavg. g f ? 0.5 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.009 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.002 ? db/ ? c table 6. ordering information device tape and reel information package a2t21h360--23nr6 r6 suffix = 150 units, 56 mm tape width, 13--inch reel om--1230--4l2s 1. part internally matched both on input and output. 2. measurements made with device in an a symmetrical doherty configuration. 3. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. a2t21h360--23nr6 figure 2. a2t21h360--23nr6 test circuit component layout aft21h360--24n rev. 1 d75885 r1 r2 c1 c2 r4 r3 r5 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 c17 c18 -- c19 c20 c21 c22 cut out area v dda v ddb v gga z1 v ggb c p table 7. a2t21h360--23nr6 test circuit component designations and values part description part number manufacturer c1, c9, c10, c11, c12, c18 10 ? f chip capacitors c5750x7s2a106m230kb tdk c2, c8, c13, c17 9.1 pf chip capacitors atc100b9r1ct500xt atc c3, c5 9.1 pf chip capacitors atc600f9r1bt250xt atc c4 1.8 pf chip capacitor atc600f1r8bt250xt atc c6 0.8 pf chip capacitor atc600f0r8bt250xt atc c7 1.1 pf chip capacitor atc600f1r1bt250xt atc c14 4.7 pf chip capacitor atc600f4r7bt250xt atc c15 (1) c15 (2) 3.9 pf chip capacitor 9.1 pf chip capacitor atc600f3r9bt250xt atc600f9r1bt250xt atc atc c16 1.0 pf chip capacitor atc600f1r0bt250xt atc c19, c20 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp c21 0.5 pf chip capacitor atc600f0r5bt250xt atc c22 0.3 pf chip capacitor atc600f0r3bt250xt atc r1 50 ? , 4 w chip resistor cw12010t0050gbk atc r2, r3 5.6 k ? , 1/4 w chip resistors crcw12065k60fkea vishay r4, r5 6.2 ? , 1/4 w chip resistors crcw12066r20fkea vishay z1 2000?2300 mhz band, 5 db directional coupler x3c21p1-05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d75885 mtl 1. on characterization board only. 2. on production board only.
a2t21h360--23nr6 5 rf device data freescale semiconductor, inc. typical characteristics ? 2110?2200 mhz parc (db) ?2.2 ?1.8 ?1.9 ?2 ?2.1 ?2.3 2060 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. 15.4 17.4 17.2 17 ?38 52 50 48 46 ?28 ?30 ?32 ?34 ? d , drain efficiency (%) g ps , power gain (db) 16.8 16.6 16.4 16.2 16 15.8 15.6 2080 2100 2120 2140 2160 2180 2200 2220 44 ?36 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ? 90 0 ? 15 ? 30 ? 60 1 500 imd, intermodulatio n distortion (dbc) ? 45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 25 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 5 45 65 125 0 60 50 40 30 20 10 ? d ? drain efficiency (%) 105 ? d acpr parc acpr (dbc) ?38 ?26 ?28 ?30 ?34 ?32 ?36 17.2 g ps , power gain (db) 17 16.8 16.6 16.4 16.2 16 g ps ?5 1 acpr ? d g ps v dd =28vdc,p out = 10 w (pep), i dqa = 500 ma v gsb = 0.7 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im5--u im7--l im7--u 100 ?1 db = 40 w 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf ?2 db = 60 w ?3 db = 80 w im5--l im3--u ? 75 v dd =28vdc,i dqa = 500 ma, v gsb =0.7vdc f = 2140 mhz, single--carrier w--cdma v dd =28vdc,p out =63w(avg.),i dqa = 500 ma, v gsb =0.7vdc single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf parc im3--l 85
6 rf device data freescale semiconductor, inc. a2t21h360--23nr6 typical characteristics ? 2110?2200 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 8 20 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 18 16 10 400 10 ?60 acpr (dbc) 14 12 10 0 ?30 ?40 ?50 figure 7. broadband frequency response 6 18 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 500 ma v gsb =0.7vdc 14 12 10 gain (db) 16 8 1800 1900 2000 2100 2200 2300 2400 2500 2600 gain acpr ? d g ps 2200 mhz v dd =28vdc,i dqa = 500 ma v gsb = 0.7 vdc, single--carrier w--cdma 100 2170 mhz 2140 mhz 2110 mhz 2200 mhz 2110 mhz 2140 mhz 2170 mhz 2200 mhz 2110 mhz 2170 mhz 2140 mhz 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf
a2t21h360--23nr6 7 rf device data freescale semiconductor, inc. table 8. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 806 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 8.29 ? j3.71 9.64 + j2.95 1.69 ? j3.90 20.2 51.7 148 56.0 ?14 2140 8.62 ? j1.68 9.40 ? j0.19 1.66 ? j3.94 20.1 51.5 141 54.1 ?13 2170 7.88 + j1.11 7.39 ? j2.67 1.69 ? j3.81 20.5 51.5 141 55.7 ?14 2200 5.32 + j2.59 5.04 ? j2.83 1.71 ? j4.35 19.8 51.5 141 53.3 ?14 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 8.29 ? j3.71 10.7 + j2.72 1.66 ? j3.99 18.0 52.5 180 58.2 ?18 2140 8.62 ? j1.68 9.87 ? j0.96 1.63 ? j4.09 17.9 52.4 173 55.9 ?18 2170 7.88 + j1.11 7.26 ? j3.17 1.71 ? j4.01 18.2 52.3 171 57.5 ?18 2200 5.32 + j2.59 4.84 ? j3.34 1.65 ? j4.39 17.7 52.4 172 55.1 ?18 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 9. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 806 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 8.29 ? j3.71 10.9 + j0.05 3.52 ? j1.49 23.2 48.5 71 64.7 ?17 2140 8.62 ? j1.68 8.38 ? j2.17 3.42 ? j1.87 22.9 48.7 74 63.7 ?15 2170 7.88 + j1.11 6.26 ? j3.26 2.74 ? j2.46 22.5 49.7 93 62.9 ?16 2200 5.32 + j2.59 4.07 ? j3.23 2.48 ? j2.44 22.6 49.6 91 63.1 ?18 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 8.29 ? j3.71 10.2 ? j0.98 3.52 ? j1.42 21.2 49.3 85 66.6 ?26 2140 8.62 ? j1.68 7.62 ? j2.68 3.42 ? j1.74 20.9 49.5 89 65.9 ?23 2170 7.88 + j1.11 5.88 ? j3.53 2.68 ? j2.34 20.6 50.4 109 65.2 ?24 2200 5.32 + j2.59 3.29 ? j3.01 2.43 ? j1.57 21.3 49.1 80 65.4 ?27 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. a2t21h360--23nr6 table 10. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =1.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.53 ? j4.85 1.68 + j5.24 2.03 ? j4.56 18.7 54.1 255 51.5 ?15 2140 1.72 ? j5.10 2.01 + j5.45 2.08 ? j4.54 18.9 54.0 251 51.2 ?16 2170 2.19 ? j5.66 2.53 + j5.70 2.05 ? j4.58 18.9 54.0 252 51.0 ?17 2200 2.59 ? j5.85 3.28 + j5.86 2.07 ? j4.68 18.9 54.0 252 51.5 ?17 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.53 ? j4.85 1.70 + j5.31 1.86 ? j4.74 16.3 54.9 309 53.5 ?20 2140 1.72 ? j5.10 2.07 + j5.52 1.88 ? j4.85 16.5 54.8 304 52.9 ?21 2170 2.19 ? j5.66 2.62 + j5.80 1.95 ? j4.84 16.5 54.8 305 53.0 ?22 2200 2.59 ? j5.85 3.45 + j6.01 2.04 ? j4.88 16.7 54.9 306 54.0 ?23 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 11. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =1.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.53 ? j4.85 1.75 + j5.40 3.28 ? j4.94 20.0 53.3 214 56.9 ?17 2140 1.72 ? j5.10 2.16 + j5.70 3.72 ? j4.61 20.4 53.1 203 56.9 ?18 2170 2.19 ? j5.66 2.78 + j5.99 3.92 ? j4.22 20.7 52.9 197 57.6 ?20 2200 2.59 ? j5.85 3.68 + j6.13 3.90 ? j3.96 20.7 52.9 194 58.4 ?20 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 1.53 ? j4.85 1.82 + j5.42 3.28 ? j5.22 18.0 54.0 251 59.8 ?24 2140 1.72 ? j5.10 2.26 + j5.71 3.65 ? j4.90 18.2 53.9 243 59.8 ?25 2170 2.19 ? j5.66 2.90 + j5.98 3.78 ? j4.48 18.5 53.8 240 60.3 ?27 2200 2.59 ? j5.85 3.94 + j6.10 4.03 ? j4.10 18.7 53.6 228 61.3 ?28 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
a2t21h360--23nr6 9 rf device data freescale semiconductor, inc. p1db -- typical carrier side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power p e -- 5 -- 1 imaginary ( ? ) 2 34 0 -- 2 -- 3 5 -- 4 1 figure 8. p1db load pull output power contours (dbm) real ( ? ) 48 47.5 48.5 49.5 50 50.5 51 49 p e imaginary ( ? ) -- 5 -- 1 2 34 0 -- 2 -- 3 5 -- 4 1 figure 9. p1db load pull ffficiency contours (%) real ( ? ) 58 60 62 52 54 56 p e 52 50 -- 5 -- 1 imaginary ( ? ) 2 34 6 0 -- 2 -- 3 5 -- 4 1 figure 10. p1db load pull gain contours (db) real ( ? ) 20.5 20 e p 21.5 22.5 23.5 21 22 23 24 p e -- 5 -- 1 imaginary ( ? ) 2 34 6 0 -- 2 -- 3 5 -- 4 1 figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) -- 2 2 -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 1 0 -- 1 2 -- 2 4 6 6
10 rf device data freescale semiconductor, inc. a2t21h360--23nr6 p3db -- typical carrier side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 5 -- 1 imaginary ( ? ) 2 34 6 0 -- 2 -- 3 5 -- 4 1 figure 12. p3db load pull output power contours (dbm) real ( ? ) p e 50.5 51 50 51.5 49.5 52 48.5 49 imaginary ( ? ) 64 58 60 62 54 56 p e -- 5 -- 1 2 34 6 0 -- 2 -- 3 5 -- 4 1 figure 13. p3db load pull efficiency contours (%) real ( ? ) 52 -- 5 -- 1 imaginary ( ? ) 2 34 6 0 -- 2 -- 3 5 -- 4 1 figure 14. p3db load pull gain contours (db) real ( ? ) 21.5 18.5 18 p e 20.5 19.5 22 20 19 21 -- 5 -- 1 imaginary ( ? ) 2 34 6 0 -- 2 -- 3 5 -- 4 1 figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) p e -- 2 8 -- 2 6 -- 2 4 -- 2 2 -- 2 0 -- 3 0 -- 1 8 -- 1 6 -- 1 4
a2t21h360--23nr6 11 rf device data freescale semiconductor, inc. p1db -- typical peaking side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 5 -- 1 imaginary ( ? ) 2 34 6 -- 2 -- 3 5 -- 4 1 figure 16. p1db load pull output power contours (dbm) real ( ? ) -- 6 p e 53.5 51.5 52 52.5 53 48 50 52 54 56 p e -- 5 -- 1 2 34 6 -- 2 -- 3 5 -- 4 1 figure 17. p1db load pull ffficiency contours (%) real ( ? ) imaginary ( ? ) 46 -- 6 -- 5 -- 1 imaginary ( ? ) 2 34 6 -- 2 -- 3 5 -- 4 1 figure 18. p1db load pull gain contours (db) real ( ? ) 21.5 18 21 20.5 19.5 20 19 18.5 p e -- 6 p e -- 5 -- 1 imaginary ( ? ) 2 34 6 -- 2 -- 3 5 -- 4 1 figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) -- 2 0 -- 1 8 -- 1 6 -- 1 4 -- 1 2 -- 2 8 -- 2 2 -- 2 6 -- 2 4 -- 6 51 -- 7 7 -- 7 7 44 42 40 22 7 -- 7 -- 7 7 50 50.5
12 rf device data freescale semiconductor, inc. a2t21h360--23nr6 p3db -- typical peaking side load pull contours ? 2140 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power p e 52 52.5 53 -- 5 -- 1 imaginary ( ? ) 2 34 6 -- 2 -- 3 5 -- 4 1 figure 20. p3db load pull output power contours (dbm) real ( ? ) 51.5 53.5 54 54.5 51 -- 6 imaginary ( ? ) -- 5 -- 1 2 34 6 -- 2 -- 3 5 -- 4 1 figure 21. p3db load pull ffficiency contours (%) real ( ? ) -- 6 -- 5 -- 1 imaginary ( ? ) 2 34 6 -- 2 -- 3 5 -- 4 1 figure 22. p3db load pull gain contours (db) real ( ? ) 15.5 16.5 17.5 16 17 18.5 p e 18 -- 6 -- 5 -- 1 imaginary ( ? ) 2 34 6 -- 2 -- 3 5 -- 4 1 figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) -- 2 0 -- 2 2 -- 2 4 -- 2 6 -- 2 8 -- 1 8 -- 3 0 -- 3 2 -- 6 -- 7 7 -- 7 7 p e 58 50 46 48 56 54 52 54 52 44 -- 7 7 19.5 19 -- 7 7 p e
a2t21h360--23nr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. a2t21h360--23nr6
a2t21h360--23nr6 15 rf device data freescale semiconductor, inc.
16 rf device data freescale semiconductor, inc. a2t21h360--23nr6 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 mar. 2016 ? initial release of data sheet
a2t21h360--23nr6 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2016 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: a2t21h360--23n rev. 0, 3/2016

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